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By P. Antognetti, D.A. Antoniadis, Robert W. Dutton, W.G. Oldham (Editors)

ISBN-10: 902472824X

ISBN-13: 9789024728244

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Extra resources for Process and Device Simulation for MOS-VLSI Circuits (NATO ASI (Advanced Science Institutes) Series E: Applied Sciences - No. 62)

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Model based on three equal steady-state fluxes. ) tions described above, which occur during the thermal oxidation of silicon. As is indicated in Fig. 2, the flux of the oxidant from the gaf to the oxide outer surface is assumed to be F1 = h(C* - (31 Co) Co is the conwhere h is a gas-phase, transport coefficient, centration of the oxidant in the outer oxide surface, and C* is the This equilibrium concentration of the oxidant in the oxide. Co) F2 =Deff Co-Ci Xo F3 kCi Fig. 2. Boundary and Flux conditions for the Gas-Si02-Si system during thermal oxidation.

Both effects are rendering the problem unsolvable in closed form. 29 Under extrinsic conditions, two effects that affect the apparent diffusivity will be discussed here: (a) those arising from gradients of diffusing impurity profiles, often attributed to ion drift due to internal electric fields, and (b) clustering of impurity atoms that effectively slows down the impurity diffusivity. Impurity distributions resulting from such processes may be obtained only by numerical solutions of the relevant equations, as discussed in appropriate chapter of this book.

The first, proposed by Lin et al [291, postulates a three-step oxidation mechanism at the interface resulting from the need to provide free volume there, while the second, proposed by Hu [35], postulates a bimolecular annihilation of interstitials in the bulk as well as at the interface. Both models assume that the interstitial generation rate is linearly proportional to oxidation rate and derive the non-linear eq. (52) by balancing the generation rate by respectively postulated non-linear loss mechanisms.

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Process and Device Simulation for MOS-VLSI Circuits (NATO ASI (Advanced Science Institutes) Series E: Applied Sciences - No. 62) by P. Antognetti, D.A. Antoniadis, Robert W. Dutton, W.G. Oldham (Editors)


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